Vishay Introduces 30 V N-Channel MOSFET for Industrial and Telecom Applications
Vishay Intertechnology, a renowned manufacturer of advanced power electronic devices, has unveiled a highly adaptable 30 V n-channel TrenchFET Gen V power MOSFET. This innovative component boasts increased power density and superior thermal performance, making it an ideal fit for a range of applications in the industrial, computing, consumer electronics, and telecommunications sectors.
The Vishay Siliconix SiSD5300DN stands out with its utilization of source flip technology within the compact 3.3 mm by 3.3 mm PowerPAK 1212-F package. This advanced MOSFET offers an industry-leading on-resistance of 0.71 mΩ at 10 V, along with an on-resistance times gate charge figure of merit (FOM) of 42 mΩ*nC. This critical FOM is essential for MOSFETs used in switching applications.
Despite sharing the same footprint as the PowerPAK 1212-8S, this newly released device achieves an impressive 18% reduction in on-resistance. This enhancement contributes to increased power density. Furthermore, the source flip technology employed in the SiSD5300DN significantly reduces thermal resistance by 63 °C/W to 56 °C/W, ensuring cooler and more efficient operation.
The PowerPAK1212-F's source flip technology reverses the traditional proportions of the ground and source pads. By extending the ground pad area, it creates a more efficient path for thermal dissipation, promoting cooler operation. Additionally, this innovative package minimizes the switching area, mitigating the impact of trace noise. Specifically, in the PowerPAK 1212-F package, the source pad dimension sees a tenfold increase from 0.36 mm² to 4.13 mm², significantly improving thermal performance. The center gate design of the PowerPAK1212-F also facilitates the easy parallelization of multiple devices on a single-layer PCB.
The SiSD5300DN, housed in the source flip PowerPAK1212-F package, is particularly well-suited for a variety of applications. These include secondary rectification, active clamp battery management systems (BMS), buck and BLDC converters, OR-ing FETs, motor drives, and load switches. End products benefiting from this MOSFET's performance include welding equipment, power tools, servers, edge devices, supercomputers, tablets, lawnmowers, cleaning robots, and radio base stations.
This device undergoes rigorous testing, including 100% RG and UIS testing, ensuring its reliability and performance. Additionally, it complies with RoHS standards and is halogen-free, reflecting Vishay's commitment to environmental responsibility.
Key specifications
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Vishay is committed to providing customers with high-performance and reliable discrete semiconductors and passive electronic components. The SiSD5300DN-T1-GE3 further expands Vishay's product portfolio and offers a more efficient and reliable solution for industrial and telecom applications.
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